Atomic Layer Deposition
![Ald1](/sites/thinfilm/files/styles/7_5_placeholder_/public/images/2022/ald1r.png?h=661eb74b&itok=dvkrpYNg)
![Ald2](/sites/thinfilm/files/styles/7_5_placeholder_/public/images/2022/ald2r.png?h=8bc451b6&itok=S0fwpEMl)
Atomic layer deposition (ALD) is a thin-film deposition technique that allows for even growth of a material over three-dimensional surfaces. It is especially useful because the growth occurs atomic layer by atomic layer in a self-limiting chemical reaction. This allows for the growth of ultrathin film with pristine quality and excellent conformity. We are utilizing this technique to fabricate novel supercapacitors by growing thin, high-k dielectric materials over patterened three-dimensional surfaces.